Fine processing method, fine processing apparatus, and recording medium with fine processing program recorded thereon

ABSTRACT

According to one embodiment, a fine processing method includes determining a resist amount required for each first region of a pattern formation surface and a total amount of resist. The method include dividing the total amount of resist by a volume of one resist drop to determine the resist drops total number. The method include determining a provisional position for the resist drop of the total number. The method include assigning the each first region to nearest one resist drop, and partitioning again the pattern formation surface into second regions assigned to the each resist drop. The method include determining a divided value by dividing the volume of the one resist drop by the required total amount of resist determined. The method include finalizing a final position of the each resist drop, if a distribution of the divided value in the pattern formation surface falls within a target range.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of and claims the benefit of priorityunder 35 U.S.C. §120 from U.S. Ser. No. 13/204,844, filed Aug. 8, 2011,and is based upon and claims the benefit of priority from the priorJapanese Patent Application No. 2010-214422, filed on Sep. 24, 2010, theentire contents of each of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a fine processingmethod, a fine processing apparatus, and a recording medium with fineprocessing program recorded thereon.

BACKGROUND

With the miniaturization and higher packing density of semiconductordevices, the photolithography apparatus is required to have higheraccuracy. However, in realizing fine processing at several tennanometers or less, photolithography technology reaches the resolutionlimit. Hence, nanoimprint is drawing attention as one of thenext-generation fine processing technologies.

In nanoimprint, for instance, liquid droplets of resist (hereinafter,resist drops) are dropped on a foundation. A template having aprotrusion-depression pattern is pressed to the resist drops. Thus, aresist layer having a protrusion-depression pattern is formed betweenthe template and the foundation.

However, in general, the pattern density of the template is not uniform.Furthermore, the resist is typically an organic material, and hencevolatile. Thus, on the foundation, local deficiency and excess of resistdrops may occur, or unevenness may occur in the residual layer thicknessof the resist. Hence, control is needed to prevent deficiency and excessof resist drops depending on the pattern shape of the template and thevolatilization amount of the resist.

Thus, the problem is how to properly arrange resist drops on thefoundation before performing nanoimprint. By proper arrangement ofresist drops, fine processing with high accuracy can be realized.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flow chart summarizing a fine processing method according tothe embodiment;

FIG. 2A to FIG. 2C and FIG. 3A to FIG. 3C are main part sectionalschematic views describing the fine processing process according to theembodiment;

FIG. 4A and FIG. 4B describe the planar shape of a pattern;

FIG. 5A and FIG. 5B are three-dimensional views describing thevolatilization amount distribution of resist drops;

FIG. 6 shows the conversion between the input value and the supplyamount of the resist drop;

FIG. 7 is a view schematically describing a flow for determining thetotal amount of resist;

FIG. 8A and FIG. 8B are views describing the initial arrangement ofresist drops, FIG. 8A shows forming unequally spaced rectangularregions, and FIG. 8B shows arranging resist drops in unequally spacedfirst regions;

FIG. 9 is a view for describing the assignment of regions nearest toeach resist drop;

FIG. 10 is a flow chart describing the flow of the arrangement update ofresist drops;

FIG. 11 is a schematic view of the arrangement update of resist drops;and

FIG. 12 is a block configuration diagram of the fine processingapparatus.

DETAILED DESCRIPTION

In general, according to one embodiment, a fine processing method isdisclosed for two-dimensionally arranging each of a plurality of resistdrops on a pattern formation surface and pressing a template includingprotrusions and depressions onto the resist drops to form a resistpattern on the pattern formation surface. The method can includepartitioning the pattern formation surface into a plurality of firstregions and determining an amount of resist required for each of thefirst regions. One of first regions is smaller than an area occupied byone of the resist drops. The method can include determining a totalamount of resist required for an entire region of the pattern formationsurface from the amount of resist. The method can include dividing thetotal amount of resist by a volume of the one of the resist drops todetermine a total number of the resist drops arranged on the patternformation surface. The method can include determining a provisionalposition on the pattern formation surface for each of the resist dropsof the total number as a first position. The method can includeassigning the first regions to the each of the resist drops, each groupof the first regions assigned to the each of the resist drops beingnearest to the each of the resist drops, defining the each group of thefirst regions as each of a plurality of second regions, and partitioningagain the pattern formation surface into the second regions. The methodcan include dividing, for the each of the second regions, the volume ofthe one of the resist drops by a sum of the amount of resist requiredfor the each of the first regions belonging to the each of the secondregions to determine a divided value. The method can include finalizinga final position of the each of the resist drops as a second position,if a distribution of the divided value in the pattern formation surfacefalls within a target range. In addition, the method can include movingat least one of the resist drops, the partitioning, and the determiningthe divided value until the distribution falls within the target range,if the distribution of the divided value in the pattern formationsurface does not fall within the target range.

In general, according to one embodiment, in fine processing fortwo-dimensionally arranging each of a plurality of resist drops on apattern formation surface and pressing a template including protrusionsand depressions onto the resist drops to form a resist pattern on thepattern formation surface, a fine processing apparatus is provided fordetermining positions of the plurality of resist drops on the patternformation surface. The apparatus includes a first determination unit, asecond determination unit, a third determination unit, a fourthdetermination unit, a partitioning unit, a fifth determination unit, anda repeating unit. The first determination unit is configured topartition the pattern formation surface into a plurality of firstregions and to determine an amount of resist required for each of thefirst regions. One of first regions is smaller than an area occupied byone of the resist drops. The second determination unit is configured todetermine a total amount of resist required for an entire region of thepattern formation surface from the amount of resist. The thirddetermination unit is configured to divide the total amount of resist bya volume of the one of the resist drops to determine a total number ofthe resist drops arranged on the pattern formation surface. The fourthdetermination unit is configured to determine a provisional position onthe pattern formation surface for each of the resist drops of the totalnumber as a first position. The partitioning unit is configured toassign the first regions to the each of the resist drops, each group ofthe first regions assigned to the each of the resist drops being nearestto the each of the resist drops, to define the each group of the firstregions as each of a plurality of second regions, and to partition againthe pattern formation surface into the second regions. The fifthdetermination unit is configured to divide, for the each of the secondregions, the volume of the one of the resist drops by a sum of theamount of resist required for the each of the first regions belonging tothe each of the second regions to determine a divided value. Therepeating unit is configured to finalize final position of the each ofthe resist drops as a second position, if a distribution of the dividedvalue in the pattern formation surface falls within a target range, andto repeat moving at least one of the resist drops, the partitioning, andthe determining the divided value until the distribution falls withinthe target range, if the distribution of the divided value in thepattern formation surface does not fall within the target range.

In general, according to one embodiment, a recording medium with a fineprocessing program recorded on the recording medium is provided. Thefine processing program causes a computer to perform partitioning apattern formation surface into a plurality of first regions anddetermining an amount of resist required for each of the first regions.One of the first regions is smaller than an area occupied by one resistdrop. The program causes a computer to perform determining a totalamount of resist required for an entire region of the pattern formationsurface from the amount of resist. The program causes a computer toperform dividing the total amount of resist by a volume of the one ofthe resist drops to determine a total number of the resist dropsarranged on the pattern formation surface. The program causes a computerto perform determining a provisional position on the pattern formationsurface for each of the resist drops of the total number as a firstposition. The program causes a computer to perform assigning the firstregions to the each of the resist drops, each group of the first regionsassigned to the each of the resist drops being nearest to the each ofthe resist drops, defining the each group of the first regions as eachof a plurality of second regions, and partitioning again the patternformation surface into the second regions. The program causes a computerto perform dividing, for the each of the second regions, the volume ofthe one of the resist drops by a sum of the amount of resist requiredfor the each of the first regions belonging to the each of the secondregions to determine a divided value. In addition, the program causes acomputer to perform finalizing final position of the each of the resistdrops as a second position, if a distribution of the divided value inthe pattern formation surface falls within a target range, and repeatingmoving at least one of the resist drops, the partitioning, and thedetermining the divided value until the distribution falls within thetarget range, if the distribution of the divided value in the patternformation surface does not fall within the target range.

Various embodiments will be described hereinafter with reference to theaccompanying drawings. The embodiment relates to fine processing ofresist drops by nanoimprint, for instance.

FIG. 1 is a flow chart summarizing a fine processing method according tothe embodiment. In particular, FIG. 1 primarily summarizes a method foroptimizing the resist drop arrangement.

In the nanoimprint according to the embodiment, a plurality of resistdrops like liquid droplets are two-dimensionally arranged on afoundation such as a substrate by e.g. an ink jet method. Then, atemplate including protrusions and depressions is pressed onto theresist drops. Thus, a mask pattern on the order of nanometers is formedon the foundation. The supply amount of resist drops is determined inconsideration of e.g. the pattern design of the electronic device.

First, the pattern formation surface is partitioned into a plurality offirst regions. Here, the one of the first regions is smaller than thearea occupied by one resist drop. The amount of resist required for eachfirst region is determined (step S10).

Next, the amounts of resist of the first regions are summed to determinethe total amount of resist required for the entire region of the patternformation surface (step S20).

Next, the total amount of resist is divided by the volume of the resistdrop to determine the total number of resist drops arranged on thepattern formation surface (step S30).

Next, for each resist drop of the above total number, a provisionalposition on the pattern formation surface is determined (step S40).

Here, in the embodiment, the determination of the initial provisionalposition for each resist drop is referred to as “initial arrangement” ofthe resist drops.

In this initial arrangement, the positions of the resist drops aredetermined with a prescribed distance spaced therebetween. For instance,the resist drops may be arranged at equal distances, or may be arrangedin a state close to the final arrangement.

Next, each first region is assigned to the nearest resist drop. Thegroup of the first regions (the set of the first regions) assigned toeach resist drop is defined as a second region. The pattern formationsurface is partitioned again into the second regions (step S50).

Next, for the each second region, the volume of one resist drop isdivided by the sum of the required amount of resist determined for thefirst regions belonging to the second region to determine the dividedvalue (evaluation value) (step S60). In the embodiment, this dividedvalue is referred to as “evaluation value”.

Next, it is determined whether the distribution of the divided values(evaluation values) in the pattern formation surface falls within atarget range (step S70).

More specifically, for each second region, it is determined whether thevolume of the resist drop is deficient or excessive. In the embodiment,this determination is referred to as “danger point evaluation”.

For instance, in the second region where the volume of the resist dropis deficient, the pattern depression of the template may fail to befilled with the resist drop. Conversely, in the case where the volume ofthe resist drop is excessive, the residual layer thickness of the resist(the definition of which will be described later) may be thickened.Examples of the index of whether the distribution of the divided values(evaluation values) in the pattern formation surface falls within thetarget range include the difference between the maximum and the minimumof the evaluation value, the maximum of the absolute value of thedifference between the evaluation value and “1”, and the standarddeviation.

Next, if the distribution of the divided values (evaluation values) inthe pattern formation surface falls within the target range, thepositions of all the resist drops are finalized (step S80). Thus, thisflow is completed.

If the distribution of the divided values (evaluation values) in thepattern formation surface does not fall within the target range, theposition of at least one of the resist drops is changed until thedistribution falls within the target range (step S90). That is, the atleast one of the resist drops is moved until the distribution fallswithin the target range (step S90).

This change of the position is referred to as “arrangement update” ofthe resist drops. In the arrangement update, the position of at leastone of the resist drops is changed. That is, the at least one of theresist drops is moved. Next, the flow returns to the partitioning step(step S50). Then, the partitioning step (step S50) and the step ofdetermining the divided value (evaluation value) (step S60) arerepeated.

That is, the routine of step S50, step S60, step S70, and step S90 isrepeated until the distribution falls within the target range.

During this routine, the total amount of all the resist drops betweenthe pattern formation surface and the template is constant, forinstance. That is, during the routine, only the positions of the resistdrops are changed.

During the operation of the routine, when the distribution of theevaluation values in the pattern formation surface falls within thetarget range, the positions of all the resist drops are finalized (stepS80).

By such a flow, each resist drop is properly arranged on the patternformation surface.

After the position of each resist drop 20 d is finalized in step S80,the pattern processing described below is performed. The process of thepattern processing of resist drops is described in the following.

FIG. 2A to FIG. 3C and FIG. 3A to FIG. 3C are main part sectionalschematic views describing the fine processing process according to theembodiment.

First, as shown in FIG. 2A, each resist drop 20 d is arranged by e.g. anink jet method on a foundation 10 such as a semiconductor layer surfaceand a semiconductor wafer surface. The volume of one resist drop 20 d isset in the range of e.g. 1-6 pl (picoliters). The resist drop 20 d atthis stage is like a liquid droplet. The resist drop 20 d is e.g. anacrylic photocurable resin, which is cured by irradiation with UV light.The resist drop 20 d may be dropped on the foundation 10 by one shot, orby one or more shots.

Next, as shown in FIG. 2B, a template 30 is opposed to the major surfaceof the foundation 10. A pattern including protrusions 30 t anddepressions 30 c is formed at the template surface opposed to thefoundation 10. The height of the protrusion 30 t from the bottom surface30 b of the depression 30 c is defined as “pattern height”. The patternheight is e.g. 60 nm. The material of the template 30 is e.g. quartz(SiO₂).

Next, as shown in FIG. 2C, the template 30 is lowered toward thefoundation 10. Thus, the protrusion-depression pattern of the template30 is pressed to the resist drops 20 d.

Each resist drop 20 d pressed by the template 30 is three-dimensionallydeformed on the foundation 10. Thus, the pattern of the template 30 istransferred onto the foundation 10. This state is shown in FIG. 3A.

A resist layer 20 with the surface deformed in a protrusion-depressionpattern is formed between the template 30 and the foundation 10. Theresist layer 20 is irradiated with UV light through the template 30.Thus, the resist layer 20 is photocured.

Next, as shown in FIG. 3B, the template 30 is released from the resistlayer 20. Thus, the surface of the resist layer 20 is exposed. In theresist layer 20, protrusions 20 t and depressions 20 c have been formed.

The height of the protrusion 20 t from the bottom surface 20 b of thedepression 20 c of the resist layer 20 corresponds to the “patternheight”. The thickness of the resist layer 20 between the bottom surface20 b of the resist layer 20 and the surface of the foundation 10 isdefined as “residual layer thickness”. The residual layer thickness ise.g. 15 nm.

Next, as shown in FIG. 3B, the patterned resist layer 20 is dry etched.This causes layer thinning of the protrusions 20 t of the resist layer20. On the other hand, in the depression 20 c, the bottom surface 20 bis etched. As a result, a line-and-space mask pattern 20 p is formed onthe foundation 10. By such a process, nanoimprint is performed on theresist.

The resist pattern formed by nanoimprint technology as described abovecan be used in the process for manufacturing electronic devices such assemiconductor devices. For instance, by using a prescribed method suchas dry etching technology, the resist pattern formed as described abovecan be subsequently used as a mask to perform processing (e.g.patterning) on a to-be-processed layer (so-called underlying layer) ofe.g. silicon material underlying the resist pattern. In the embodiment,for instance, the to-be-processed layer can be associated with theaforementioned pattern formation surface.

Next, a specific implementation of each step illustrated in FIG. 1 isdescribed.

In the beginning, a specific procedure of steps S10-S40 is described.

First, in the flow of steps S10-S20, the total amount of resist requiredfor the entire region of the pattern formation surface 25 is determinedfrom the first input data, second input data, third input data, andfourth input data described below.

The first input data includes e.g. the pattern height of the template 30and the required residual layer thickness.

The second input data includes e.g. the density distribution of thepattern (or the coverage distribution of the pattern) formed on thepattern formation surface by the template 30. Whether the pattern issparse or dense is determined by the magnitude of pattern coverage. Thepattern coverage refers to the ratio at which the mask pattern 20 pcovers the pattern formation surface 25 per unit area of the patternformation surface 25.

As the second input data, it is also possible to select the densitydistribution of the pattern of the template 30. This is because thedensity distribution of the pattern formed on the pattern formationsurface is substantially the same as the density distribution of thepattern of the template 30. In the following description, the densitydistribution of the pattern formed on the pattern formation surface isused.

For instance, FIG. 4A and FIG. 4B describe the planar shape of apattern. More specifically, FIG. 4A is a plan schematic view of thepattern, and FIG. 4B shows a method for calculating the pattern density.

As shown in FIG. 4A, a plurality of mask patterns 20 p are formed in thepattern formation surface 25. The horizontal and vertical dimensions ofthe pattern formation surface 25 correspond to the horizontal andvertical dimensions of the pattern formation surface of the template 30.In the pattern formation surface 25, in the portion where the maskpatterns 20 p are located more closely, the density of the mask patterns20 p is higher.

Specifically, the density of the mask patterns 20 p is calculated asshown in FIG. 4B.

First, the density of the mask patterns 20 p is determined along a firstline 25-1 parallel to the short side 25 a of the pattern formationsurface 25 from the start point 26 of the pattern formation surface 25.Next, from the start point 26 of the pattern formation surface 25 to thelong side 25 b opposed thereto, the density of the mask patterns 20 p isdetermined along a second line 25-2 adjacent to the first line 25-1.This repeated scan is performed from the start point 26 to the end point27 of the X-th line 25-X. Thus, the density distribution (coveragedistribution) of the mask patterns 20 p in the pattern formation surface25 is determined.

The third input data includes e.g. the volatilization amountdistribution of resist drops.

FIG. 5A and FIG. 5B are three-dimensional views describing thevolatilization amount distribution of resist drops.

More specifically, FIG. 5A three-dimensionally shows the layer thicknessdistribution after volatilization of the resist drops distributed in thepattern formation surface 25.

During nanoimprint, resist drops are more likely to volatilize towardthe edge of the template 30. Hence, after volatilization of the resistdrops, as shown in FIG. 5A, the layer thickness of the resist drops maybe thinner at the edge than in the central portion.

FIG. 5B three-dimensionally shows the layer thickness distribution ofthe resist drops in which the resist drop distribution in the patternformation surface 25 is corrected based on the result of FIG. 5A. Asdescribed above, resist drops are more likely to volatilize toward theedge of the template 30. Thus, as shown in FIG. 5B, the total amount ofresist is adjusted so that the volume of resist increases toward theedge of the pattern formation surface 25.

These first to third input data are calculated by partitioning thepattern data (GDS) in the pattern formation surface 25 into firstregions of e.g. 5 μm×5 μm each.

The fourth input data includes e.g. the correction amount of the volumeof the resist drop.

FIG. 6 shows the conversion between the input value and the supplyamount of the resist drop.

The horizontal axis of FIG. 6 represents the input value (indicationvalue) of the resist drop 20 d. The vertical axis represents the supplyamount in which the resist drop 20 d is actually supplied. In the casewhere there is a discrepancy between the input value of the resist drop20 d and the supply amount of the resist drop 20 d, the conversionresult shown in FIG. 6 is used to correct the total amount of resist.

The flow for determining the total amount of resist can be summarized ina block diagram as shown in FIG. 7. The horizontal length of each blockcorresponds to e.g. the longitudinal length of the pattern formationsurface 25.

The block 10 a-1 represents the total amount of resist calculated fromthe first input data (pattern height, residual layer thickness) and thesecond input data (density distribution of the pattern).

The block 10 a-2 represents the third input data (volatilization amountdistribution of resist drops).

The block 10 a-3 represents the total amount of resist in which theblock 10 a-1 is corrected by the third input data (block 10 a-2). Thatis, the resist drop amount increases toward the edge of the block.

The block 10 a-4 represents the total amount of resist in which theblock 10 a-3 is corrected by the fourth input data (correction amount ofthe resist drop amount).

If the total amount of resist is properly determined, the total amountof resist is divided by the volume (supply amount) of the resist drop 20d to determine the total number of resist drops 20 d required fordistribution in the pattern formation surface 25 (step S30).

Next, after the required number of resist drops 20 d is calculated, aprovisional position of each resist drop 20 d is determined (step S40).

Here, an initial arrangement method for initially determining theprovisional position of the resist drop 20 d is described.

FIG. 8A and FIG. 8B describe the initial arrangement of resist drops.More specifically, FIG. 8A shows forming unequally spaced rectangularregions, and FIG. 8B shows arranging resist drops in unequally spacedfirst regions.

First, as shown in FIG. 8A, before the initial arrangement of resistdrops 20 d, the pattern formation surface 25 is partitioned intorectangular regions 28 at horizontally and vertically unequal distances.

For instance, the extending direction of the long side 25 b of thepattern formation surface 25 is referred to as X direction (firstdirection), and the extending direction of the short side 25 a isreferred to as Y direction (second direction). Then, the patternformation surface 25 is divided by lines unequally spaced in the Xdirection and lines unequally spaced in the Y direction. This results inrectangular regions 28 enclosed with the respective lines. The area ofthe rectangular region 28 with a relatively high pattern density is madesmaller than the area of the rectangular region 28 with a relatively lowpattern density. That is, as the area of the rectangular region 28becomes larger, the pattern coverage in the rectangular region 28becomes lower.

Here, the total volume of resist drops in the regions of the patternformation surface 25 partitioned in the X direction, or the total volumeof resist drops in the regions of the pattern formation surface 25partitioned in the Y direction, is equal.

As shown in FIG. 8B, in each rectangular region 28, for instance, oneresist drop 20 d is arranged. In each rectangular region 28, the maskpatterns 20 p have a certain distribution. Hence, the resist drop 20 dis arranged at the barycenter of each rectangular region 28. Thebarycenter of the rectangular region 28 is the equilibrium point ofweight (first weight) converted from the pattern coverage of therectangular region 28. Thus, the initial arrangement of resist drops 20d is completed.

Next, the flow of steps S50-S70 is specifically described.

FIG. 9 is an illustration for describing the assignment of regionsnearest to each resist drop.

FIG. 9 shows a pattern formation surface 25 partitioned in advance intofirst regions 40 of 5 μm×5 μm each. In the pattern formation surface 25,by the initial arrangement, a plurality of resist drops 20 d aredistributed as shown.

Each first region 40 is assigned to the nearest resist drop 20 d. Thegroup of first regions 40 assigned to each resist drop 20 d is definedas a second region 45.

That is, the pattern formation surface 25 is partitioned again intosecond regions 45 (step S50).

For instance, among the first regions 40, the first region 40-1 isnearest to the resist drop 20 d-1 indicated by arrow A. Hence, the firstregion 40-1 is set to belong to the second region (nearest region) 45-1nearest to the resist drop 20 d-1.

On the other hand, the first region 40-2 is nearest not to the resistdrop 20 d-1, but to the resist drop 20 d-2 indicated by arrow B. Hence,the first region 40-2 is set to belong to the second region 45-2 nearestto the resist drop 20 d-2. Furthermore, the first region 40-3 is nearestto the resist drop 20 d-3 indicated by arrow C. Hence, the first region40-3 is set to belong to the second region 45-3 nearest to the resistdrop 20 d-3.

Thus, each first region 40 is assigned to its nearest resist drop 20 d.Such assignment is performed for all the first regions 40 in the patternformation surface 25.

Next, the volume of the resist drop for each assigned second region 45is evaluated. For instance, the evaluation value for each second region45 is determined (step S60). The evaluation value is given by thefollowing equation (1).Evaluation value=(volume of one resist drop)/(total of the requiredamount of resist determined for the first regions 40 belonging to thesecond region 45)   (1)

Here, the “volume of one resist drop” corresponds to each resist drop 20d present in each second region 45.

The “total of the required amount of resist determined for the firstregions 40 belonging to the second region 45” is the sum over a givensecond region 45 of the amounts of resist required for the first regionsbelonging to that second region 45. In other words, “total of therequired amount of resist determined for the first regions 40 belongingto the second region 45” is a sum of the amount of resist required forthe each of the first regions 40 belonging to the each of the secondregions 45. In the embodiment, the evaluation value in each secondregion 45 is calculated.

It is more desirable that the evaluation value of each second region bemore approximate to “1”. If the evaluation value is larger than “1”,then in that second region, the volume of the resist drop is excessive,and the residual layer thickness may become thicker than the intendedvalue. If the evaluation value is smaller than “1”, then in that secondregion, the volume of the resist drop is deficient. The patterndepression of the template 30 may fail to be filled with the resistdrop, or the residual layer thickness may become thinner than theintended value.

Next, it is determined whether the distribution of these evaluationvalues in the pattern formation surface falls within a target range(step S70).

Subsequently, if the distribution of the evaluation values in thepattern formation surface does not fall within the target range, thearrangement update of the resist drops 20 d described below isperformed.

In particular, immediately after the initial arrangement of resist drops20 d, the evaluation value of each second region is not necessarilyapproximate to “1”. Hence, the evaluation value of each second region ismade approximate to “1” by performing the arrangement update of theresist drops 20 d.

Next, the arrangement update of the resist drops 20 d in step S90 isdescribed.

FIG. 10 is a flow chart describing the flow of the arrangement update ofresist drops.

The arrangement update of the resist drops 20 d in step S90 is describedwith reference to this flow chart and the following figure.

FIG. 11 is a schematic view of the arrangement update of resist drops.

First, from among the resist drops 20 d, at least one of the resistdrops 20 d to be moved is selected. In other words, the resist drop tobe changed is selected (step S90 a).

According to the embodiment, at least other two or more resist drops 20d nearest to the resist drops 20 d to be moved are selected as anexample. The one of the second regions 45 includes the one of the resistdrops 20 d to be moved. The another one of the second regions 45includes each of the other resist drops 20 d.

For instance, the resist drop 20 d-1 in the figure is selected.Furthermore, at least one different resist drop nearest to the resistdrop 20 d-1 is selected (step S90 b).

In the case of selecting two resist drops nearest to the resist drop 20d-1, for instance, the resist drop 20 d-2 and the resist drop 20 d-3 inthe figure are selected. For the second region 45-1, the second region45-2, and the second region 45-3 including the respective resist drops,evaluation values have already been determined.

Next, the evaluation values of the second region 45-1, the second region45-2, and the second region 45-3 are each converted to e.g. a weight.Here, the weight converted from the second region 45-1 is defined as asecond weight, the weight converted from the second region 45-2 or thesecond region 45-3 is defined as a third weight. The barycenter 50 basedon the converted weights is determined (step S90 c).

The barycenter 50 is the equilibrium point of the weights converted fromthe respective evaluation values. In the figure, the degree of weight isshown by the height of a cylinder. More specifically, in the exampleshown, the evaluation value in the second region 45-1 is highest, andthe evaluation value in the second region 45-3 is lowest. Hence, thebarycenter 50 is deviated from the centroid of the triangle with thevertices corresponding to the center points of the resist drops 20 d-1,20 d-2, and 20 d-3, and is biased toward the resist drop 20 d-1.

Next, a polygon with the barycenter 50 placed at the centroid (center offigure) is formed. For instance, in the case where the resist drop 20d-1 is selected as the object of the arrangement update, with thebarycenter 50 placed at the centroid, a polygon including as verticesthe positions of the resist drop 20 d-2 and the resist drop 20 d-3 otherthan the resist drop 20 d-1 is determined (step S90 d).

In FIG. 11, as the polygon, a triangle is illustrated. In this triangle,the center points of the resist drops 20 d-2 and 20 d-3 are used as twovertices. The remaining vertex is determined to be the vertex 55 in thefigure with the barycenter 50 placed at the centroid.

Next, a vector line 56 is drawn from the center point of the resist drop20 d-1 to the vertex 55. Subsequently, a shift vector line 57 isdetermined to be r (r<1) times the vector line 56. Then, the resist drop20 d-1 is moved toward the vertex 55 of the polygon. For instance, theresist drop 20 d-1 is moved along the shift vector line 57 (step S90 e).In the case where a triangle is drawn as the polygon, “r” is 1/10 ormore and ½ or less. The arrangement update is performed for at least oneof all the resist drops 20 d.

Subsequently, the flow returns to step S50 shown in FIG. 1. After goingto step S60, it is determined again whether the distribution of theevaluation values in the pattern formation surface 25 falls within thetarget range (step S70).

If the distribution of the evaluation values in the pattern formationsurface 25 falls within the target range, the positions of all theresist drops 20 d are finalized (step S80).

Subsequently, the nanoimprint illustrated in FIGS. 2A to 3C isperformed. Then, the pattern depression of the template 30 does not failto be filled with the resist drop 20 d, and a residual layer thicknesswith uniform thickness is achieved on the foundation 10. That is,according to the embodiment, the arrangement of resist drops 20 d in thepattern formation surface 25 is optimized to realize fine processingwith high accuracy.

In the above example, two resist drops are selected as the resist dropsnearest to the resist drop 20 d-1. The number of selected resist dropsnearest to the resist drop 20 d-1 may be one, or three or more.

Next, a fine processing apparatus according to the embodiment isdescribed.

FIG. 12 is a block configuration diagram of the fine processingapparatus.

In fine processing using the fine processing apparatus 100, a pluralityof resist drops 20 d are two-dimensionally arranged on a patternformation surface. A template 30 including protrusions and depressionsis pressed onto the resist drops 20 d to form a resist pattern on thepattern formation surface 25. The fine processing apparatus 100determines the positions of the plurality of resist drops on the patternformation surface.

The fine processing apparatus 100 includes a calculation section 110, astorage section 120, and an application section 130. By a computer, thefine processing apparatus 100 can automatically perform the fineprocessing method described with reference to FIG. 1 to FIG. 11. Thecalculation section 110, the storage section 120, and the applicationsection 130 are connected on-line to each other. The calculation section110, the storage section 120, and the application section 130 are notindependent of each other, but managed by a CPU (central processingunit) of the fine processing apparatus 100.

The calculation section 110 includes a determination unit 110 a. Thedetermination unit 110 a partitions the pattern formation surface 25into a plurality of first regions 40. One of the first regions 40 issmaller than the area occupied by one resist drop 20 d. Thedetermination unit 110 a determines the amount of resist required foreach first region 40.

The calculation section 110 includes a determination unit 110 b. Thedetermination unit 110 b sums the amounts of resist to determine thetotal amount of resist required for the entire region of the patternformation surface 25.

The calculation section 110 includes a determination unit 110 c. Thedetermination unit 110 c divides the total amount of resist by thevolume of the resist drop 20 d to determine the total number of resistdrops 20 d arranged on the pattern formation surface 25.

The calculation section 110 includes a determination unit 110 d. Foreach resist drop 20 d of the above total number, the determination unit110 d determines a provisional position on the pattern formation surface25.

The calculation section 110 includes a partitioning unit 110 e. Thepartitioning unit 110 e assigns each first region 40 to the nearestresist drop 20 d for each first region 40. The partitioning unit 110 edefines the group of the first regions 40 assigned to each resist drop20 d as a second region 45. The partitioning unit 110 e partitions againthe pattern formation surface 25 into the second regions 45.

The calculation section 110 includes a determination unit 110 f. Foreach second region 45, the determination unit 110 f divides the volumeof one resist drop by the required total amount of resist determined forthe first regions 40 belonging to the second region 45 to determine thedivided value.

The calculation section 110 includes a repeating unit 110 g. If thedistribution of the divided values in the pattern formation surface 25falls within the target range, the repeating unit 110 g finalizes thepositions of all the resist drops 20 d. If the distribution of thedivided values in the pattern formation surface 25 does not fall withinthe target range, then until this distribution falls within the targetrange, the repeating unit 110 g repeats changing the position of atleast one of the resist drops 20 d, and the operation of thepartitioning unit 110 e and the determination unit 110 f for determiningthe divided value.

The determination unit 110 d for determining the provisional positioncan place a resist drop 20 d in each rectangular region 28. Therectangular region 28 is enclosed with lines partitioning the patternformation surface 25 at unequal distances in the X direction (see FIG.8A and FIG. 8B) and lines partitioning the pattern formation surface 25at unequal distances in the Y direction perpendicular to the Xdirection.

The procedure for changing the position of the resist drop 20 d followsthe flow illustrated in FIG. 11.

The fine processing apparatus 100 further includes an application unit(application section 130) for two-dimensionally applying a plurality ofresist drops 20 d onto the pattern formation surface 25 after thepositions of the resist drops 20 d are finalized.

For instance, as shown in FIG. 2A, the application unit 130 can supplyresist drops 20 d onto the foundation 10 from a nozzle (not shown).

The storage unit 120, such as a recording medium, stores a fineprocessing program causing a computer to perform the flow illustratedwith reference to FIGS. 1, 7, and 10.

The embodiments of the invention have been described above withreference to examples. However, the invention is not limited to theseexamples. That is, those skilled in the art can suitably modify theseexamples, and such modifications are also encompassed within the scopeof the invention as long as they fall within the spirit of theinvention. Various components of the above examples and their layout,material, condition, shape, size and the like are not limited to thoseillustrated above, but can be suitably modified.

Furthermore, various components of the above embodiments can be combinedwith each other as long as technically feasible. Such combinations arealso encompassed within the scope of the invention as long as they fallwithin the spirit of the invention.

Furthermore, those skilled in the art can conceive various modificationsand variations within the spirit of the invention. It is understood thatsuch modifications and variations are also encompassed within the scopeof the invention.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the invention.

What is claimed is:
 1. A recording medium with a fine processing programrecorded on the recording medium, the fine processing program causing acomputer in a fine processing apparatus to perform: partitioning apattern formation surface into a plurality of first regions, one of thefirst regions being smaller than an area occupied by one resist drop,and determining an amount of resist required for each of the firstregions; determining a total amount of resist required for an entireregion of the pattern formation surface from the amount of resist;dividing the total amount of resist by a volume of the one of the resistdrops to determine a total number of the resist drops arranged on thepattern formation surface; determining a provisional position on thepattern formation surface for each of the resist drops of the totalnumber as a first position; assigning the first regions to the each ofthe resist drops, each group of the first regions assigned to the eachof the resist drops being nearest to the each of the resist drops,defining the each group of the first regions as each of a plurality ofsecond regions, and partitioning again the pattern formation surfaceinto the second regions; dividing, for the each of the second regions,the volume of the one of the resist drops by a sum of the amount ofresist required for the each of the first regions belonging to the eachof the second regions to determine a divided value; finalizing a finalposition of the each of the resist drops as a second position, if adistribution of the divided value in the pattern formation surface fallswithin a target range; and repeating moving at least one of the resistdrops, the partitioning, and the determining the divided value until thedistribution falls within the target range, if the distribution of thedivided value in the pattern formation surface does not fall within thetarget range.
 2. The medium according to claim 1, wherein thedetermining the first position includes placing the one of the resistdrops in each of a plurality of rectangular regions enclosed with firstlines partitioning the pattern formation surface at unequal distances ina first direction and second lines partitioning the pattern formationsurface at unequal distances in a second direction perpendicular to thefirst direction.
 3. The medium according to claim 2, wherein in aroutine of repeating the moving the at least one of the resist drops,the partitioning, and the determining the divided value, the totalamount of resist is constant.
 4. The medium according to claim 1,wherein the moving the at least one of the resist drops includes:selecting at least two or more other resist drops nearest to the atleast one of the resist drops to be moved; converting the divided valuedetermined in one of the second regions to a second weight, the one ofthe second regions including the one of the resist drops to be moved,and the divided value determined in an another one of the second regionsincluding each of the other resist drops to a third weight, anddetermining a barycenter of the other resist drops and the at least oneof the resist drops from the second weight and the third weight; forminga polygon including a position of the each of the other resist drops asa vertex with the barycenter placed at a centroid; and moving the atleast one of the resist drops toward another vertex of the polygon otherthan the vertex of the each of the other resist drops.